INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU406H
DESCRIPTION
·High
Voltage: V
CEV
= 400V(Min)
·Fast
Switching Speed-
: t
f
= 400ns(Max.)
·Low
Saturation Voltage-
: V
CE(sat)
= 1.0V(Max.)@ I
C
= 5A
APPLICATIONS
·Designed
for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Repetitive
Collector Current- Peak (10ms)
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
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w
w
VALUE
400
UNIT
V
200
6
V
V
7
A
10
A
15
4
60
150
-55~150
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.08
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU406H
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ;I
B
= 0
200
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.8A
B
1.0
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
B
1.2
5.0
0.1
1.0
1.0
V
I
CES
Collector Cutoff Current
V
CE
= 400V; V
BE
= 0
V
CE
=250V; V
BE
= 0
V
CE
=250V; V
BE
= 0;T
C
= 150℃
V
EB
= 6V; I
C
= 0
mA
I
EBO
Emitter Cutoff Current
f
T
Current-Gain—Bandwidth Product
t
f
Fall Time
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I
C
= 0.5A; V
CE
= 10V
I
C
= 5A; I
B1
= -I
B2
= 0.8A
.cn
i
10
mA
MHz
0.4
μs
isc Website：www.iscsemi.cn
2
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