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BU921P

Description
Silicon NPN Darlington Power Transistor
File Size205KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU921P Overview

Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU921P
DESCRIPTION
·High
Voltage
·DARLINGTON
APPLICATIONS
·Designed
for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
450
UNIT
V
400
5
V
V
10
A
15
5
105
150
-65~150
A
A
W
P
C
T
j
T
stg
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.2
UNIT
℃/W
isc Website:www.iscsemi.cn
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