INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU922PFI
DESCRIPTION
·High
Voltage
·DARLINGTON
APPLICATIONS
·Designed
for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
500
UNIT
V
450
5
V
V
10
A
15
5
55
150
-65~150
A
A
W
℃
℃
P
C
T
j
T
stg
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.27
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU922PFI
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0
450
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
1.8
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 7A; I
B
= 140mA
B
1.8
V
V
BE
(sat)-1
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
2.2
V
V
BE
(sat)-2
Base-Emitter Saturation Voltage
I
C
= 7A; I
B
= 140mA
B
2.5
0.25
0.5
0.25
V
I
CES
Collector Cutoff Current
I
CEO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
V
ECF
C-E Diode Forward Voltage
w
.cn
i
em
cs
.is
w
w
V
CE
= 500V; V
BE
= 0
V
CE
= 500V; V
BE
= 0;T
j
= 125℃
V
CE
= 450V; I
B
= 0
V
EB
= 5V; I
C
= 0
I
F
= 7A
mA
mA
50
mA
2.5
V
isc Website：www.iscsemi.cn
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