INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3783
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 800V(Min)
·High
Switching Speed
APPLICATIONS
·High
speed and high voltage switching applications.
·Switching
regulator applications.
·High
speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base voltage
w
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i
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cs
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w
w
VALUE
UNIT
900
V
800
V
7
V
5
A
7
A
3
A
I
C
I
CM
Collector Current-Continuous
Collector Current-Pulse
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
100
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3783
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
800
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA; I
E
= 0
900
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.6A
B
1.0
V
V
BE
(sat)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.6A
B
1.5
V
Collector Cutoff Current
V
CB
= 800V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
Switching times
t
on
Turn-on Time
t
stg
Storage Time
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i
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cs
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w
w
V
EB
= 7V; I
C
= 0
I
C
= 10mA; V
CE
= 5V
10
I
C
= 3A; V
CE
= 5V
10
V
CC
≈
400V, I
B1
= 0.3A; I
B2
= -0.8A
R
L
= 133Ω;P
W
=20μs;
Duty Cycle≤1%
1.0
mA
1.0
μs
3.5
μs
t
f
Fall Time
1.0
μs
isc Website：www.iscsemi.cn
2
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