INCHANGE Semiconductor
isc
Product Specification
isc
Silicon Darlington NPN Power Transistor
BU522A
DESCRIPTION
·High
Voltage
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 2.0V @ I
C
= 4A
APPLICATIONS
·Designed
for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CER(SUS)
V
CER
V
CBO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
400
425
UNIT
V
V
450
5
V
V
7
A
2
75
150
-55~150
A
W
℃
℃
P
C
T
j
T
stg
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.67
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon Darlington NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU522A
TYP.
MAX
UNIT
V
CER(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 1.0A; R
BE
= 270Ω
400
V
V
CE
(sat)
V
BE
(sat)
I
CER
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 80mA
B
2.0
V
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 80mA
B
2.5
V
Collector Cutoff Current
V
CR
= 400V; R
BE
= 270Ω
V
CB
= 450V; I
E
= 0
1.0
mA
Collector Cutoff Current
1.0
mA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
f
T
Current-Gain—Bandwidth Product
C
OB
Output Capacitance
w
.cn
i
em
cs
.is
w
w
V
EB
= 5V; I
C
= 0
I
C
= 2.5A; V
CE
= 5V
250
I
C
= 0.3A; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
40
mA
7.5
MHz
150
pF
isc Website：www.iscsemi.cn
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