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SC200H100S5F

Description
DIODE 100 V, SILICON, RECTIFIER DIODE, WAFER, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size248KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SC200H100S5F Overview

DIODE 100 V, SILICON, RECTIFIER DIODE, WAFER, Rectifier Diode

SC200H100S5F Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeWAFER
package instructionO-XUUC-N
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.77 V
JESD-30 codeO-XUUC-N
Number of components1
Phase1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formUNCASED CHIP
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1
Bulletin I0505J rev. C 05/01
SC200.....5. Series
SCHOTTKY DIE 200 x 200 mils
a
c
0.35 ± 0.01
(14 ± 0.4)
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION: (MILS).
D
b
d
C
A
Ø
40 (157)
3. DIMENSIONS AND TOLERANCES:
a = 5.08 + 0, - 0.01
(200 + 0, - 0.4)
b = 5.08 + 0, - 0.01
(200 + 0, - 0.4)
c = 4.57 + 0, - 0.01
(180 + 0, - 0.4)
d = 4.57 + 0, - 0.01
(180 + 0, - 0.4)
Ø = 1 ± 0.15
(40 ± 6)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
D = Reject Ink Dot (only on non-conforming dies)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Sawing Street
0.05 + 0, - 0.005
(2 + 0, - 0.2)
Wafer flat alligned with
side b of the die
Ø 125 (492)
NOT TO SCALE
NOTE:
10 mils die thickness is available on specific request only.
Contact factory for information.
www.irf.com
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