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VS46417801BTS-10

Description
Synchronous DRAM Module, 4MX64, 8ns, CMOS, DIMM-168
Categorystorage    storage   
File Size296KB,30 Pages
ManufacturerVanguard International Semiconductor Corporation
Websitehttp://www.vis.com.tw/
Download Datasheet Parametric View All

VS46417801BTS-10 Overview

Synchronous DRAM Module, 4MX64, 8ns, CMOS, DIMM-168

VS46417801BTS-10 Parametric

Parameter NameAttribute value
MakerVanguard International Semiconductor Corporation
Parts packaging codeDIMM
package instructionDIMM,
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time8 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
VIS
Description
dynamic
RAM
module
(DIMM).
It
is
mounted
with
8/16
pieces
of
VS26417801B,VS46417801B
2M,4MX64-Bit
SDRAM Module
The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous
2M
x
8
synchronous
DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and
VS46417801B make high density possible without utilizing the surface mount technology on the printed
circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. The module uses
serial presence detects implemented via a 2k-bit serial EEPROM component.
Features
VS26417801B, VS46417801B :
• Single 3.3V (
±
0.3V
) power supply
• Utilizes 100MHz SDRAM components
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable burst length (1,2,4,8 & Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• I/O level : LVTTL interface
• Random column access in every cycle
• 2048 refresh cycles/32ms
• Serial Presence Detect (SPD)
• JEDEC Standard pinout
• Comply to Intel PC - 100 4clock unbuffered SDRAM DIMM spec.
Document:1G5-0134
Rev.2
Page 1
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