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M58LR256KB85ZC5F

Description
Flash, 16MX16, 85ns, PBGA79, VFBGA-79
Categorystorage    storage   
File Size2MB,121 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M58LR256KB85ZC5F Overview

Flash, 16MX16, 85ns, PBGA79, VFBGA-79

M58LR256KB85ZC5F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionVFBGA, BGA79,7X13,30
Contacts79
Reach Compliance Codeunknown
Maximum access time85 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B79
length11 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,255
Number of terminals79
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA79,7X13,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size16K,64K
Maximum standby current0.00005 A
Maximum slew rate0.067 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width9 mm
Base Number Matches1
M58LR128KT M58LR128KB
M58LR256KT M58LR256KB
128 or 256 Mbit (x16, multiple bank, multilevel interface, burst)
1.8 V supply flash memories
Features
Supply voltage
– V
DD
= 1.7 V to 2.0 V for program, erase
and read
– V
DDQ
= 1.7 V to 2.0 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode:
54 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 70 ns, 85 ns
Synchronous burst read suspend
Programming time
– 2.5
μs
typical word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array:
8 Mbit banks for the M58LR128KT/B
16 Mbit banks for the M58LR256KT/B
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for block lock-down
– Absolute write protection with V
PP
= V
SS
FBGA
VFBGA56 (ZB) 7.7 x 9 mm
VFBGA79 (ZC) 9 x 11 mm
TFBGA88 (ZQ) 8 x 10 mm
Security
– 64 bit unique device number
– 2112 bit user programmable OTP cells
Common flash interface (CFI)
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LR128KT: 88C4h
M58LR256KT: 880Dh
– Bottom device codes
M58LR128KB: 88C5h
M58LR256KB: 880Eh
The M58LR128KT/B is available in the
ECOPACK-compliant VFBGA56 package.
The M58LR256KT/B is available in the
ECOPACK-compliant VFBGA79 and
TFBGA88 packages.
October 2008
Rev 6
1/120
www.numonyx.com
1

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