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GBPC3510MT0

Description
BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size253KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

GBPC3510MT0 Overview

BRIDGE RECTIFIER DIODE

GBPC3510MT0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codeunknown
Diode typeBRIDGE RECTIFIER DIODE
Base Number Matches1
GBPC 15, 25, 35 SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Integrally molded heatsink provide very low
thermal resistance for maximum heat dissipation
- Typical I
R
less than 0.2μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Glass Passivated Bridge Rectifiers
GBPC
MECHANICAL DATA
Case:
GBPC
GBPC-W: Wire structure
GBPC-M: Terminal cathode parallel to anode
Molding compound, UL flammability classification rating 94V-0
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
20 in-lbs maximum
Weight:
16.95 g (approximately)
GBPC-W
GBPC-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
GBPC15
GBPC25
GBPC35
Peak forward surge current,8.3 ms
single half sine-wave superimposed
on rated load (JEDEC method)
Maximum instantaneous
forward voltage drop per
element at specified current
(Note 1)
GBPC15
GBPC25
GBPC35
SYMBOL
V
RRM
V
RMS
V
DC
005
50
35
50
01
100
70
100
02
200
140
200
04
400
280
400
15
25
35
300
I
FSM
300
400
A
06
600
420
600
08
800
560
800
10
1000
700
1000
UNIT
V
V
V
I
F(AV)
A
GBPC15 7.5A
GBPC25 12.5A
GBPC35 17.5A
@ T
J
=25°C
V
F
1.1
V
Maximum reverse current @ Rated VR
Typical thermal resistance
Operating junction temperature range
Storage temperature range
I
R
R
θJC
T
J
T
STG
5
1.5
- 55 to +150
- 55 to +150
μA
°C/W
°C
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1410091
Version: K14
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