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GC9943-TCC-129B

Description
Mixer Diode, High Barrier, C Band, Silicon,
CategoryDiscrete semiconductor    diode   
File Size311KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

GC9943-TCC-129B Overview

Mixer Diode, High Barrier, C Band, Silicon,

GC9943-TCC-129B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionS-CTMW-F3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance0.3 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.63 V
frequency bandC BAND
JESD-30 codeS-CTMW-F3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationTRIPLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeHIGH BARRIER
Base Number Matches1

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Index Files: 1949  939  2449  1643  1065  40  19  50  34  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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