TPC6111
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSV)
TPC6111
Notebook PC Applications
Portable Equipment Applications
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 33 mΩ (typ.)
Low leakage current: I
DSS
=
−10 μA
(max) (V
DS
=
−20
V)
Enhancement mode: V
th
=
−0.3
to
−1.0
V
(V
DS
=
−10
V, I
D
=
−1mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
(Note 4)
E
AR
T
ch
T
stg
Rating
−20
−20
±
8
−5.5
−22
2.2
0.7
5.1
−2.8
0.019
150
−55~150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Drain power dissipation
Drain power dissipation
JEDEC
JEITA
TOSHIBA
―
―
2-3T1A
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Weight: 0.011 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
56.8
178.5
Unit
°C/W
°C/W
Circuit Configuration
6
5
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1
2009-05-12
TPC6111
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
Drain-source ON resistance
R
DS (ON)
R
DS (ON)
R
DS (ON)
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs 1
Q
gd
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
GS
0 V
−5
V
4.7
Ω
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±
8 V, V
DS
=
0 V
V
DS
= −20
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
8 V
V
DS
= −10
V, I
D
= −1mA
V
GS
= −1.5
V, I
D
= −1.4
A
V
GS
= −1.8
V, I
D
= −1.4
A
V
GS
= −2.5
V, I
D
= −2.8
A
V
GS
= −4.5
V, I
D
= −2.8
A
V
DS
= −10
V, I
D
= −2.8
A
Min
⎯
⎯
−20
−12
−0.3
⎯
⎯
⎯
⎯
7
⎯
⎯
⎯
⎯
I
D
= −2.8
A
V
OUT
R
L
=
3.6
Ω
⎯
⎯
⎯
⎯
V
DD
≈ −16
V, V
GS
= −5
V,
I
D
= −5.5
A
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
76
56
44
33
14
Max
±1
−10
⎯
⎯
−1.0
150
80
57
40
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
pF
S
mΩ
Unit
μA
μA
V
V
700
100
140
7
12
30
95
10
1.2
2.5
V
DD
≈ −10
V
Duty
≤
1%, t
w
=
10
μs
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
—
I
DR
= −5.5
A, V
GS
=
0 V
Min
—
—
Typ.
—
—
Max
−22
1.2
Unit
A
V
Forward voltage (diode)
2
2009-05-12
TPC6111
Marking
(Note 5)
Lot code (month)
Lot No.
Part No.
(or abbreviation code)
S3L
Product-specific code
Lot code
(year)
Note
Pin #1
Note: A dot marking for identifying the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
=
5 s)
(b) Device mounted on a glass-epoxy board (b) (t
=
5 s)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
(a)
(b)
Note 3: V
DD
= −16
V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
Ω,
I
AR
= −2.8
A
Note 4: Repetitive rating;:pulse width limited by maximum channel temperature
Note 5:
•
on lower left of the marking indicates Pin 1.
3
2009-05-12
TPC6111
I
D
– V
DS
−5
−3
−4
−4.5
−1.8
−5
−2.5
−2
−20
−1.5
−1.6
−1.7
−1.4
−16
−5
−2.5
I
D
– V
DS
−2.1
−2
−3
−1.8
Drain current I
D
(A)
−3
Drain current I
D
(A)
−4.5
−12
−1.6
−8
−1.5
VGS
= −1.4
V
−4
−1.2
−2
Common source
Ta
=
25°C
Pulse test
VGS
= −1.1
V
0
−1
Common source
Ta
=
25°C
Pulse test
0
−1
−2
−3
−4
−5
0
−0.1
−0.2
−0.3
−0.4
−0.5
0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−10
Common source
VDS
= −10
V
Pulse test
−0.6
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
−8
V
DS
(V)
Drain-source voltage
−0.48
Drain current I
D
(A)
−6
−0.36
−4
25
−2
100
0
0
−0.4
−0.8
Ta
= −55°C
−0.24
ID
= −5.5
A
−2.8
−1.4
−0.12
−1.2
−1.6
−2
0
0
−2
−4
−6
−8
−10
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
100
1000
R
DS (ON)
– I
D
Common source
Ta
=
25°C
Pulse test
Forward transfer admittance
⎪Y
fs
⎪
(S)
10
100
25
Drain-source ON resistance
R
DS (ON)
(mΩ)
Ta
= −55°C
100
−1.8
VGS
= −1.5
V
−2.5
1
Common source
VDS
= −10
V
Pulse test
0.1
−0.
1
−1
−10
−100
−4.5
10
−0.1
−1
−10
−100
Drain current I
D
(A)
Drain current I
D
(A)
4
2009-05-12
TPC6111
R
DS (ON)
– Ta
150
Common source
Pulse test
−100
I
DR
– V
DS
(A)
−2.5
−4.5
−10
−1
−1.8 −1.5
Drain-source ON resistance
R
DS (ON)
(mΩ)
120
ID
= −5.5
A
−2.8
A
90
VGS
= −1.5
V
−1.4
A
Drain reverse current I
DR
VGS
=
0 V
60
−1
30
−1.8
V
0
−80
−40
0
−2.5
V
−4.5
V
40
80
120
160
−0.1
0
Common source
Ta
=
25°C
Pulse test
0.3
0.6
0.9
1.2
1.5
Ambient temperature Ta (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
10000
−1
V
th
– Ta
Common source
VDS
= −10
V
ID
= −1
mA
Pulse test
V
th
(V)
Gate threshold voltage
−100
Capacitance C
(pF)
1000
Ciss
−0.8
100
Coss
Crss
−0.6
−0.4
10
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
−1
−10
−0.2
1
−0.1
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Ambient temperature Ta (°C)
P
D
– Ta
2.5
(1) t
=
5s
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
Dynamic input/output characteristics
−20
−10
Drain power dissipation P
D
(W)
V
DS
(V)
2.0
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
−16
−8
Drain-source voltage
−4
V
−8
VDD
= −16
V
−4
Common source
ID
= −5.5
A
Ta
=
25°C
Pulse test
1.0
(2) t
=
5s
0.5
−4
VGS
−2
0
0
40
80
120
160
0
0
0
4
8
12
16
Ambient temperature Ta (°C)
Total gate charge Q
g
(nC)
5
2009-05-12
Gate-source voltage
1.5
−12
−8
V
−6
V
GS
(V)
VDS
Embedded System
京公网安备 11010802033920号
EEWORLD
