MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
30 A
35 V to 60 V
200 A
0.58 V, 0.63 V
150 µA
175 °C
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
(1)
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change at rated V
R
Operating junction temperature range
Storage temperature range
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
Document Number: 88792
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
T
STG
2.0
30
25
10 000
- 65 to + 175
- 65 to + 175
35
35
35
45
45
45
30
80
200
1.0
20
50
50
50
60
60
60
V
V
V
A
mJ
A
A
mJ
kV
V/µs
°C
°C
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H35PT
MBR30H45PT
TYP.
Maximum instantaneous forward voltage
per diode
(1)
Maximum reverse current at rated V
R
per diode
(2)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤
40 ms
I
F
= 20 A
I
F
= 20 A
I
F
= 30 A
I
F
= 30 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
T
J
= 25 °C
T
J
= 125 °C
-
0.54
-
0.62
-
6.0
MAX.
0.66
0.58
0.73
0.66
150
25
MBR30H50PT
MBR30H60PT
TYP.
-
0.60
-
0.66
-
4.0
MAX.
0.74
0.63
0.83
0.70
150
25
UNIT
V
F
V
I
R
µA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case
per diode
SYMBOL
R
θJC
MBR30H35PT
MBR30H45PT
1.4
MBR30H50PT
MBR30H60PT
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-247AD
PREFERRED P/N
MBR30H45PT-E3/45
UNIT WEIGHT (g)
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise specified)
40
250
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
200
30
Peak Forward Surge Current (A)
50
75
100
125
150
175
Average Forward Current (A)
150
20
100
10
50
0
0
25
0
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88792
Revision: 19-May-08
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
1
T
J
= 125 °C
0.1
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Junction Capacitance (pF)
1000
100
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
T
J
= 150 °C
10
10
1
T
J
= 125 °C
0.1
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Leakage
Current (mA)
1
0.01
0.001
T
J
= 25 °C
0.0001
0
20
40
60
80
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Document Number: 88792
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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