HWL27YRA datasheet, PDF - EEWORLD Datasheet

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HWL27YRA: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET; CategoryDiscrete semiconductor The transistor; File Size91KB，4 Pages; ManufacturerHexawave; Websitehttp://www.hw.com.tw

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HWL27YRA Overview

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

HWL27YRA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hexawave
package instruction	SMALL OUTLINE, R-CDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (Abs) (ID)	0.6 A
Maximum drain current (ID)	0.46 A
FET technology	JUNCTION
highest frequency band	S BAND
JESD-30 code	R-CDSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	3.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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L-Band GaAs Power FET

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http://www.hw.com.tw

Email:

sales@hw.com.tw

All specifications are subject to change without notice.

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