DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES
•
Low forward voltage
•
High breakdown voltage
•
Guard ring protected
•
Hermetically-sealed leaded glass
package
•
Low diode capacitance.
k
handbook, halfpage
BAT81; BAT82; BAT83
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
a
APPLICATIONS
MAM193
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
BAT81
BAT82
BAT83
I
F
I
FRM
I
FSM
T
stg
T
j
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
≤
10 ms
PARAMETER
continuous reverse voltage
−
−
−
−
−
−
−65
−
40
50
60
30
150
500
150
125
V
V
V
mA
mA
mA
°C
°C
CONDITIONS
MIN.
MAX.
UNIT
1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 15 mA
I
R
C
d
reverse current
diode capacitance
V
R
= V
Rmax
; see Fig.3
BAT81; BAT82; BAT83
CONDITIONS
MAX.
330
410
1
200
1.6
UNIT
mV
mV
V
nA
pF
f = 1 MHz; V
R
= 1 V; see Fig.4
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD68 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
320
UNIT
K/W
1996 Mar 20
3
Philips Semiconductors
Product specification
Schottky barrier diodes
GRAPHICAL DATA
MGC690
BAT81; BAT82; BAT83
10
2
handbook, halfpage
IF
(mA)
10
10
4
handbook, halfpage
IR
(nA)
10
3
MGC689
(1)
(1) (2) (3)
10
2
(2)
10
1
1
(3)
(1) (2) (3)
10
−1
10
−2
10
−1
0
0.2
0.4
0.6
0.8
1.0
VF (V)
0
20
40
VR (V)
60
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
2.0
Cd
(pF)
1.5
MGC688
1.0
0.5
0
0
15
30
45
VR (V)
60
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 20
4
Philips Semiconductors
Product specification
Schottky barrier diodes
PACKAGE OUTLINE
BAT81; BAT82; BAT83
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA212 - 1
Dimensions in mm.
Cathode indicated by a coloured band.
The diodes are type branded.
Fig.5 SOD68; (DO-34).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 20
5
京公网安备 11010802033920号
EEWORLD
