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MXLPLAD30KP15CA/TR

Description
Trans Voltage Suppressor Diode, 30000W, 15V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size336KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MXLPLAD30KP15CA/TR Overview

Trans Voltage Suppressor Diode, 30000W, 15V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1

MXLPLAD30KP15CA/TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionR-PSSO-G1
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage18.5 V
Minimum breakdown voltage16.7 V
Breakdown voltage nominal value17.6 V
Shell connectionCATHODE
Maximum clamping voltage25.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G1
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 30,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 14 to 400 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD30KP14A thru MPLAD30KP400CA, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA
o
Class 5: MPLAD30KP14A to 400CA (short distance)
o
Class 5: MPLAD30KP14A to 220CA (long distance)
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3: MPLAD30KP14A to 400CA
o
Class 4: MPLAD30KP14A to 220CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: MPLAD30KP10A to 400CA
o
Class 3: MPLAD30KP14A to 220CA
o
Class 4: MPLAD30KP14A to 110CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 30,000 watts at 10/1000 μs (also see Figures 1 and 2)
with impulse repetition rate (duty factor) of 0.05 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 0.5 ºC/W junction to case or 50ºC/W junction to ambient when mounted
on FR4 PC board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 250 watts at T
C
= 25 °C or 2.5 watts at T
A
= 25 °C when
mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional
devices only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01005 Rev D, November 2010
High Reliability Product Group
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