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BC63916_NL

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BC63916_NL Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC63916_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC63916
BC63916
Switching and Amplifier Applications
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage at R
BE
=1KΩ
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating and Storage Junction Temperature Range
Value
100
100
80
5
1
1
-55 ~ 150
Units
V
V
V
V
A
W
°C
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 5V, I
C
=10mA,
f = 50MHz
100
25
100
25
Min.
100
80
5.0
100
10
250
0.5
1
V
V
MHz
Typ.
Max.
Units
V
V
V
nA
µA
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
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