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HY62SF8400ASLM-I-10

Description
Standard SRAM, 512KX8, 100ns, CMOS, PBGA36, MICRO, BGA-36
Categorystorage    storage   
File Size143KB,9 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62SF8400ASLM-I-10 Overview

Standard SRAM, 512KX8, 100ns, CMOS, PBGA36, MICRO, BGA-36

HY62SF8400ASLM-I-10 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeBGA
package instructionVFBGA,
Contacts36
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time100 ns
JESD-30 codeR-PBGA-B36
JESD-609 codee1
length8.4 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height0.95 mm
Maximum supply voltage (Vsup)2.3 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width7.2 mm
Base Number Matches1
HY62SF8400A Series
512Kx8bit full CMOS SRAM
DESCRIPTION
The HY62SF8400A is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62SF8400A uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup
-. 1.2V(min) data retention
Standard pin configuration
-. 36-ball uBGA
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
3
3
HY62SF16400A
1.7~2.3
85/100/120
HY62SF16400A-I 1.7~2.3
85/100/120
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Standby
Current(uA)
LL
SL
10
2
10
2
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
A0
IO5
IO6
Vss
Vcc
IO7
IO8
A9
A18
A17
A15
A13
A1
A2
CS2
/WE
NC
A3
A4
A5
A6
A7
A8
A0
BLOCK DIAGRAM
ROW
DECODER
IO1
COLUMN
DECODER
I/O1
SENSE AMP
IO2
ADD INPUT
BUFFER
PRE DECODER
DATA I/O
BUFFER
Vcc
Vss
IO3
IO4
A14
/CS1
CS2
/OE
/WE
A18
MEMORY ARRAY
256K x 8
WRITE DRIVER
BLOCK
DECODER
/OE /CS1 A16
A10 A11
A12
I/O8
uBGA
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Pin Name
A0 ~ A18
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Address Input
Data Input/Output
Power(1.7V~2.3V)
Ground
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.05 / Jun.00
Hyundai Semiconductor
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