1N4001GP datasheet, PDF - EEWORLD Datasheet

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1N4001GP: Description1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL; Categorysemiconductor Discrete semiconductor; File Size36KB，3 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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1N4001GP Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL

1N4001GP Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, DO-41, 2 PIN
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	2 us
Maximum repetitive peak reverse voltage	50 V
Maximum average forward current	1 A

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

1N4001GP

THRU

1N4007GP

1 Amp Glass

PassivatedRectifier

50 - 1000 Volts

DO-41

Features

•

Glass Passivated Junction

Low Current Leakage

Metalurgically Bonded Construction

Low Cost

•

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 20

°C/W

Junction To Lead

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

Catalog

Number

1N4001GP

1N4002GP

1N4003GP

1N4004GP

1N4005GP

1N4006GP

1N4007GP

---

35V

70V

140V

280V

420V

560V

700V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

1.0A

= 75°C

Current

Peak Forward Surge

FSM

30A

8.3ms, half sine

Current

Maximum

1.1V

= 1.0A;

Instantaneous

Forward Voltage

= 25°C*

Maximum DC

Reverse Current At

5.0µA

= 25°C

Rated DC Blocking

50µA

= 125°C

Voltage

Typical Junction

15pF

Measured at

Capacitance

1.0MHz, V

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

DIMENSIONS

INCHES

MIN

.166

.080

.028

1.000

MIN

4.10

2.00

.70

25.40

DIM

MAX

.205

.107

.034

---

MAX

5.20

2.70

.90

---

NOTE

www.cnelectr .com

1N4001GP Related Products

	1N4001GP	1N4002GP	1N4006GP	1N4003GP	1N4004GP	1N4005GP	1N4007GP
Description	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL

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