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BAS21

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size63KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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SIGNAL DIODE

BAS21 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BAS19
THRU
BAS21
Small
Signal Diodes
250mW
SOT-23
A
D
Features
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Fast Switching speed
l
Epitaxial Planar Die Construction
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Weight: 0.008 grams ( approx.)
l
Marking Code
Continuous
Reverse
Part
Marking
Voltage
Number
V
R
(V)
BAS19
BAS20
BAS21
JP
JR
JS
100
150
200
Repetitive
Peak
Reverse
Voltage
V
RRM
(V)
120
200
250
G
C
B
F
E
H
J
K
DIMENSIONS
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Parameter
Symbol Value
Non-repetitive
@ t=1us
2.5
I
FSM
Peak Reverse Voltage
@ t=1s
0.5
I
F(AV)
Average Rectified Forward Current
200
(1)
I
F
Forward DC Current at T
amb
=25
o
C
200
(2)
Repetitive Peak Forward Current
I
FRM
625
Unit
A
mA
mA
mA
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
P
tot
250
mW
Power Dissipation up to T
amb
=25
o
C
Thermal Resistance Junction to
R
q
JA
430
o
C/W
Ambient
Operating & Storage Temperature T
j
, T
STG
-65~150
o
C
Notes:
(1) Measured under pulse conditions;
Pulse time = t
p
<= 0.3ms
(2) Device on fiberglass substrate,
See layout on next page
.037
.950
.037
.950
www.cnelectr.com

BAS21 Related Products

BAS21 BAS19 BAS20
Description SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE
state ACTIVE TRANSFERRED CONSULT MFR
Diode type Signal diode SIGNAL DIODE Signal diode
Number of terminals - 3 3
Number of components - 1 1
Processing package description - PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
packaging shape - RECTANGULAR Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE
surface mount - Yes Yes
Terminal form - GULL WING GULL WING
terminal coating - NOT SPECIFIED NOT SPECIFIED
Terminal location - DUAL pair
Packaging Materials - PLASTIC/EPOXY Plastic/Epoxy
structure - SINGLE single
Diode component materials - SILICON silicon
Maximum power consumption limit - 0.3500 W 0.3500 W
Maximum reverse recovery time - 0.0500 us 0.0500 us
Maximum repetitive peak reverse voltage - 100 V 150 V
Maximum average forward current - 0.2000 A 0.2000 A

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