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BAT85

Description
0.2 A, SILICON, SIGNAL DIODE, DO-204AH
Categorysemiconductor    Discrete semiconductor   
File Size119KB,1 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
Download Datasheet Parametric View All

BAT85 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-204AH

BAT85 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGlass, DO-35, 2 PIN
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum average forward current0.2000 A
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BAT85
SMALL SIGNAL
SCHOTTKY
DIODES
Features
·
·
For general purpose applications
These diodes features very low turn-on voltage and fast switching.
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
This diode is also available in the Mini-MELF case with type
designation LL85.
·

MECHANICAL DATA
·
·
·
Case: Do-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
 

 




ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Forward Continuous Current at T =25
0
C
Repetitive Peak Forward Current at t<1s, ä< 0.5,T=25 C
Surge forward current at t
p
<10mS , T=25
0
C
Power Dissipation
at T=65
0
C
0
Value
30
200
300
600
200
125
-55~+125
-55~+150
Units
V
mA
mA
mA
mW
0
0
0
V
R
I
F
I
FM
I
FSM
P
tot
T
J
T
A
T
STG
 

  


Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
C
C
C
Dimensions in inches and (millimeters)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with 100
µ
A pulses
Forward voltage
Pulse Test t
p
300
µ
s,
δ
2%
at I
F
=0.1mA,
at I
F
=1mA,
at I
F
=10mA,
at I
F
=30mA,
at I
F
=100mA
Leakage current V
R
=25V
Junction Capacitance at V
R
=1V ,f=1MHz
Reverse recovery time Form I
F
=10mA,I
R
=10mA,I
R
=1mA
Thermal resistance junction to ambient Air
V
(BR)R
V
F
V
F
V
F
V
F
V
F
I
R
C
J
trr
R
θ
JA
30
V
0.50
0.24
0.32
0.4
0.8
2
10
5
300

V
V
V
V
V
µA
pF
ns
K/W
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
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