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BC857B

Description
10 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size342KB,6 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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BC857B Overview

10 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC857B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWeitron Technology
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC856BDW Series
PNP Dual General Purpose Transistors
P b
Lead(Pb)-Free
3
2
1
6 5
4
1
4
5
6
2
3
PNP+PNP
SOT-363(SC-88)
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC856
65
80
5.0
100
BC857
45
50
5.0
100
BC858
30
30
5.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristics
Total Device Dissipation Per Device
FR-5 Board(1)T
A
= 25°C
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Note : FR-5=1.0 x 0.75 x 0.062 inch
Symbol
P
D
R
θJA
Tj
Tstg
Max
380
250
3.0
328
+150
-55 to +150
Unit
mW
mW/ °C
°C/W
°C
°C
Device Marking
BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L
WEITRON
http://www.weitron.com.tw
1/6
14-Nov-07
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