BCX53
PNP Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (
T
A
=25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
V
CBO
V
CEO
V
EBO
IC
PD
TJ
Tstg
Value
-100
-80
-5.0
-1.0
500
+150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
Total Device Dissipation T
A
=25°C
Junction Temperature Range
Storage Temperature Range
Device Marking
BCX53=AH , BCX53-10=AK , BCX53-16=AL
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage, I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage, I
E
= -10µA, I
C
= 0
Collector Cut-off Current, V
CB
= -30V, I
E
= 0
Emitter Cut-off Current, V
EB
= -5.0V, I
C
= 0
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
Min
-
-
-
-
-
Max
-100
-80
-5.0
-0.1
-0.1
Unit
V
V
V
µA
µA
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
1/3
12-Oct-06
BCX53
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
V
CE
= -2.0V, I
C
= -150mA
BCX53
BCX53-10
BCX53-16
h
FE1
63
63
100
63
40
-
-
-
-
-
-
-
-
-
250
160
250
-
-
-0.5
-1.0
-
V
V
MHz
-
V
CE
= -2.0V, I
C
= -5.0mA
V
CE
= -2.0V, I
C
= -500mA
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
Base-Emitter Voltage
V
CE
= -2.0V, I
C
= -500mA
TransitionFrequence
V
CE
= -5V, I
C
= -10mA, f = 100MHz
h
FE2
h
FE3
V
CE(sat)
V
BE(ON)
f
T
-
50
WEITRON
http://www.weitron.com.tw
2/3
12-Oct-06