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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1725
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This
µ
PA1725 is N-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and so on.
8
PACKAGE DRAWING (Unit : mm)
5
1,
2,3
4
5,6,7,8
;
;
;
;
Non connection
Source
Gate
Drain
FEATURES
•
2.5-V gate drive and low on-resistance
R
DS(on)1
= 21.0 mΩ MAX. (V
GS
= 4.5 V, I
D
= 3.5 A)
1.44
1.8 MAX.
1
5.37 MAX.
+0.10
–0.05
4
6.0 ±0.3
4.4
0.8
R
DS(on)2
= 22.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 3.5 A)
R
DS(on)3
= 30.0 mΩ MAX. (V
GS
= 2.5 V, I
D
= 3.5 A)
•
Low C
iss
: C
iss
= 950 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1725G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±7
±28
2.0
150
–55 to + 150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 1200 mm
2
x 2.2mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14049EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
1999, 2000
Microcontroller MCU
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