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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA2720AGR
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The
μ
PA2720AGR is N-channel MOS Field Effect Transistor
designed for power management applications of a notebook
computer and Lithium-Ion battery protection circuit.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 6.6 mΩ MAX. (V
GS
= 10 V, I
D
= 7 A)
R
DS(on)2
= 14 mΩ MAX. (V
GS
= 5.0 V, I
D
= 7 A)
•
Low input capacitance
C
iss
= 3600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
•
RoHS Compliant
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Note
Note
PACKING
Tape 2500 p/reel
PACKAGE
Power SOP8
0.08 g TYP.
μ
PA2720AGR-E1-AT
μ
PA2720AGR-E2-AT
Pure Sn
Note
Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Note2
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Note3
Single Avalanche Current
Note3
Single Avalanche Energy
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
30
±20
±14
±150
1.1
2.5
150
−55
to +150
14
19.6
V
V
A
A
W
W
°C
°C
A
mJ
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18704EJ2V0DS00 (2nd edition)
Date Published October 2008 NS
Printed in Japan
2007, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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