UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TE Connectivity |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 65 V |
| Maximum drain current (ID) | 1.4 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 2.4 pF |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-CDFM-F6 |
| Number of components | 1 |
| Number of terminals | 6 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 14.4 W |
| Minimum power gain (Gp) | 10 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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