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UNR1123

Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size143KB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UNR1123 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN

UNR1123 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
(UN1121/1122/1123/1124/112X/112Y)
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
R 0.9
R 0.7
G
1.0
±0.1
(0.85)
0.45
±0.05
1.25
±0.05
I
Resistance by Part Number
G
G
G
G
G
G
0.55
±0.1
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
3
(2.5)
2
(2.5)
1
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
R1
C
B
R2
E
Note) The part numbers in the parenthesis show conventional part number.
1
4.1
±0.2
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
4.5
±0.1
I
Features

UNR1123 Related Products

UNR1123 UNR1124
Description Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 4.54
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 60
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.6 W 0.6 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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