Small Signal Transistor Arrays
UNA0234
Silicon PNP epitaxial planar transistor (4 elements)
Silicon NPN epitaxial planar transistor (4 elements)
Unit: mm
For motor drives
For Small motor drive circuits in general
■
Features
•
Small and lightweight
•
Low power consumption
•
Low-voltage drive
•
With 8 elements incorporated
0.2
+0.1
–0.0
0.3
±0.1
8 7654321
(0.5)
5.5
±0.3
7.7
±0.3
45°
9 10 11 12 13 14 15 16
0.75
±0.1
6.5
±0.3
(0.8)
1.5
±0.1
1.5
+0.2
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
PNP
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Peak collector current
NPN
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Peak collector current
Overall
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
I
CP
V
CBO
V
CEO
I
C
I
CP
P
T
T
j
T
stg
Rating
−10
−10
−1.5
−2
10
10
1.5
2
0.5
150
−55
to
+150
Unit
V
V
A
A
V
V
A
A
W
°C
°C
12°
1: Emitter
2: Base
3: Collector
4: Base
5: Emitter
6: Base
7: Collector
8: Base
9: Emitter
10: Base
11: Collector
12: Base
12°
13: Emitter
14: Base
15: Collector
16: Base
SO16-G1 Package
Marking Symbol: UN234
Internal Connection
8
7
6
5
4
3
2
1
9 10 11 12 13 14 15 16
Note) *: When the dissipation on one device is T
C
=
25°C
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
PNP
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emittter resistance
*1
Forward voltage
*2
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE
V
CE(sat)
R
BE
V
F
I
F
=
−
0.5 A
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
V
CB
= −10
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
CE
= −1
V, I
C
= −400
mA
I
C
= −1
A, I
B
= −25
mA
−30%
12.5
200
Min
−10
−10
−1
−2
700
−
0.35
+30%
−1.3
Typ
Max
Unit
V
V
µA
µA
V
kΩ
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Application to the internal resistance
*2: Application to the internal diode
Publication date: December 2002
SJK00053AED
0.5
±0.2
1
UNA0234
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
•
NPN
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emittter resistance
*1
Forward voltage
*2
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE
V
CE(sat)
R
BE
V
F
I
F
= 0.5 A
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
1 V, I
C
=
400 mA
I
C
=
1 A, I
B
=
25 mA
Min
10
10
Typ
Max
Unit
V
V
µA
µA
V
kΩ
V
1
2
200
−30%
700
0.25
12.5
+30%
1.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Application to the internal resistance
*2: Application to the internal diode
Common characteristics chart
P
T
T
a
0.6
Total power dissipation P
T
(W)
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of PNP transistor block
I
C
V
CE
−
0.8
I
B
= −1.0
mA
−
0.6
−
0.9 mA
T
a
=
25°C
−
0.8 mA
−1.0
−1.2
I
C
V
BE
V
CE
= −1
V
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
40
Collector current I
C
(A)
Collector current I
C
(A)
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−1
−
0.8
T
a
=
85°C
−25°C
−
0.4
−
0.6
−
0.1
25°C
T
a
=
85°C
−25°C
−
0.4
−
0.2
−
0.01
−
0.2
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−
0.001
−
0.001
−
0.01
−
0.1
−1
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
2
SJK00053AED
UNA0234
h
FE
I
C
V
CE
= −1
V
T
a
=
85°C
400
25°C
300
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
1 000
f
=
1 MHz
T
a
=
25°C
500
Forward current transfer ratio
h
FE
−25°C
100
200
100
0
−
0.001
−
0.01
−
0.1
−1
−10
10
0
−5
−10
−15
−20
−25
Collector current
I
C
(A)
Collector-base voltage V
CB
(V)
Characteristics charts of NPN transistor block
I
C
V
CE
0.9
0.8
0.7
I
B
=
1.0 mA
0.9 mA
0.8 mA
1.0
25°C
I
C
V
BE
Collector-emitter saturation voltage V
CE(sat)
(V)
T
a
=
25°C
1.2
V
CE
=
1 V
V
CE(sat)
I
C
1
I
C
/ I
B
=
40
Collector current I
C
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
Collector current I
C
(A)
0.7 mA
0.8
T
a
=
85°C
−25°C
0.1
T
a
=
85°C
−25°C
0.01
0.6
25°C
0.4
0.2
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
I
C
V
CE
=
1 V
T
a
=
85°C
25°C
700
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
100
f
=
1 MHz
T
a
=
25°C
800
Forward current transfer ratio
h
FE
600
500
400
300
200
100
0
0.001
−25°C
10
0
5
10
0.01
0.1
1
10
15
20
25
Collector current
I
C
(A)
Collector-base voltage V
CB
(V)
SJK00053AED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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