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UN601

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, MINI POWER PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

UN601 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, MINI POWER PACKAGE-6

UN601 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Composite Transistors
UN601
Silicon PNP epitaxial planer transistor (Tr)
Silicon schottky barrier diode (Di)
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
2.5±0.2
For DC–DC converter
1.5±0.2
(1.05)
q
q
q
Two elements incorporated into one package. (Tr+Di)
Reduction of the mounting area and assembly cost by one half.
Automatic mounting possible through 12mm wide emboss-tap-
ing supply.
0.25±0.1
q
2SA1674+MA720
0.6±0.1
(0.4)
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
T
j
Collector to base voltage
Collector to emitter voltage
4.5±0.2
(Ta=25˚C)
–80
–80
–5
–1
Ratings
Unit
V
V
V
A
A
Mini-Power Type Package (6–Pin)
Marking Symbol:
6A
Internal Connection
1
2
3
Transistor block
Emitter to base voltage
Collector current
0 to 0.1
s
Basic Part Number of Element
Peak collector current
Total power dissipation
P
T*1
T
stg
V
R
Junction temperature
Diode block
*2
Peak forward current
I
F(AV)
I
FSM
T
j
nt
in
Reverse voltage
ue
Storage temperature
Non-Repetitive peak forward current
Non-Repetitive peak forward voltage
Junction temperature
/D
V
RRM
T
stg
*1
*2
Be careful about the charge of a human body and leakage of the equip-
ment used.
Pl
e
Rated input/output frequency: 400MHz
Note: This Schottky barrier diode is sensitive to electric shock (static elec-
tricity, etc.).
M
ai
nt
en
Printed circuit board: Copper foil area of 4cm
2
or more and thickness of
1.7mm for the collector portion.
an
Storage temperature
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1
2
3
6
5
4
s
Features
(φ0.8)
(0.7)
6-0.4±0.1
4-1.5±0.1
4.5±0.2
0.05±0.05
–1.5
0.5
6
5
4
W
150
˚C
–55 to +150
40
˚C
V
500
1.5
40
mA
A
V
is
co
ce
125
˚C
–55 to +125
˚C
1.8±0.1
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