CD4148WP
SMALL-SIGNAL CHIP DIODE
1206
.085(2.16)
.025(.635)
.067(1.70)
FEATURES
This diode is also available other case styles
Including the 0805 case with the type designation
CD4148WSP and the 0603 case with the type
,
Designation CD4148WTP
Silicon Epitaxial Planar Diode
Fast switching diode.
MECHANICAL DATA
Case 1206
Weight Approx. 10mg
Marking Cathode band
Absolute Maxmum Ratings
&
Thermal Characteristics
T
amb
=25 C, unless otherwise specified
o
PARAMETER
Reverse Voltage
Peak Reverse Voltage
Forward Continuous current
Average rectified current sin half wave rectification with
resistive load f
=50Hz
Surge Forward Current t 1
S
and T
J
=25
0
C
Power dissipation
Typical Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature
1) Valid provided that electrodes are kept at ambient temperature
SYMBOL
V
R
V
RM
I
FM
I
F(AV)
I
FSM
P
tot
R
JA
VALUE
75
100
300
150
1)
UNITS
Volts
Volts
mA
mA
mA
mW
K/W
0
500
400
375
1)
1)
T
J
T
S
175
-65 to +175
C
C
0
Electrical Characteristics
T
amb
=25 C, unless otherwise specified
o
PARAMETER
Forward voltage
I
F
=10mA
V
R
=20V
Leakage current
V
R
=75V
V
R
=20V, T
J
=150 C
Capacitance
V
F
=V
R
=0V
0
SYMBOL
V
F
Min
Max
1.0
25
UNIT
V
nA
uA
uA
pF
I
R
5.0
50
C
tot
4
Voltage rise when switching ON tested with 50mA pulses,
tp= 0.1us, rise time < 30ns
fp= (5 to 100) KHz
Reverse recovery time
Rectification efficiency
I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100
F=100MHz, V
RF
=2V
T
RR
r
45
4
nS
%
V
FR
2.5
V
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