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IRF8252PBF

Description
25 A, 25 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size234KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF8252PBF Overview

25 A, 25 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF8252PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)231 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.0027 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 96158
IRF8252PbF
Applications
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l
HEXFET
®
Power MOSFET
V
DSS
25V 2.7m
:
@V
GS
= 10V 35nC
A
A
D
D
D
D
R
DS(on)
max
Qg
Benefits
l
l
l
l
l
l
l
l
Very Low Gate Charge
Very Low R
DS(on)
at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V
GS
Max. Gate Rating
100% tested for Rg
RoHS Compliant (Halogen Free)
Low Thermal Resistance
S
S
S
G
1
2
3
4
8
7
6
5
Top View
SO-8
Description
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are
critical in synchronous buck
operation
including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
25
±20
25
20
200
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes

through
…
are on page 9
www.irf.com
1
07/07/08
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