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SBW-5089

Description
Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, SOT-89, 3 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size664KB,7 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric View All

SBW-5089 Overview

Wide Band Low Power Amplifier, 0MHz Min, 8000MHz Max, SOT-89, 3 PIN

SBW-5089 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQorvo
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain14.2 dB
Maximum input power (CW)17 dBm
JESD-609 codee0
Maximum operating frequency8000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage standing wave ratio2
Base Number Matches1
SBW-5089(Z)
DCto8GHz
Cascadable
InGaP/GaAs
HBT MMIC
Amplifier
SBW-5089(Z)
DCto8GHz CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Dar-
lington circuit fabricated with InGaP process technology provides broadband RF per-
formance up to 8GHz and excellent thermal performance. The heterojunction
increases breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in high suppression of inter-
modulation products. Operation requires only a single positive voltage supply, 2 DC-
blocking capacitors, a bias resistor and an RF choke.
Optimum Technology
Matching® Applied
GaAs HBT
25
Features
Available in RoHS Compliant and
Pb-Free (Z Part Number)
50 Cascadable Gain Block
Wideband Flat Gain to 3GHz:
+/-1.4dB
P
1dB
= 13.4 at 6GHz
Input / Output VSWR
<2:3to8GHz
Patented Thermal Design
Single Voltage Supply Operation
Gain Return Loss versus Frequency, I
D
=80mA (Typ),
Tuned Application Circut
0
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Gain (dB)
20
Gain
15
ORL
10
IRL
5
-20
-15
-10
-5
Return Loss (dB)
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Wideband Instrumentation
Fiber Optic Driver
OC-48
Basestation
SAT COM
0
0
1
2
3
4
5
6
7
8
Frequency (GHz)
-25
Parameter
Small Signal Gain, PC board and
connector losses de-embedded
Min.
19.3
16.7
14.2
Specification
Typ.
20.3
17.5
17.2
15.0
20.1
19.4
35.5
34.0
13.0
Max.
21.3
19.0
16.5
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
850MHz
Condition
Output Power at 1dB Compression
18.4
Output Third Order Intercept Point
32.0
Output Power
Determined by Return Loss
6000
MHz
Noise Figure
3.9
4.4
dB
Worst case Input Return Loss
7.0
10.0
dB
Worst case Output Return Loss
8.0
10.0
dB
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
72.0
80.0
88.0
mA
Thermal Resistance
70
°C/W
Test Conditions: V
S
=8V I
D
=80mA Typ. OIP
3
Tone Spacing=1MHz T
L
=25°C
Bias Resistance=39 P
OUT
per tone=0dBm Z
S
=Z
L
=50
3000MHz
4200MHz
6000MHz
850MHz
1950MHz
850MHz
1950MHz
1950MHz, -45dBc ACP IS-95 9 Forward Chan-
nels (P
OUT
)
>10dB
1950MHz
DCto6000MHz
DCto6000MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS150923
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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