PD - 97360
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
l
RoHS compliant
IRLR8259PbF
IRLU8259PbF
HEXFET
®
Power MOSFET
V
DSS
25V
R
DS(on)
max
8.7mΩ
D
Qg
6.8nC
S
G
S
D
G
D-Pak
I-Pak
IRLR8259PbF IRLU8259PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
25
± 20
57
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
f
40
f
230
48
24
A
W
W/°C
°C
0.32
-55 to + 175
300 (1.6mm from case)
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
3.15
50
110
Units
°C/W
gÃ
–––
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 11
www.irf.com
1
12/16/08
IRLR/U8259PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
6.3
10.6
1.90
-7.1
–––
–––
–––
–––
–––
6.8
1.5
1.1
2.4
1.8
3.5
5.9
2.2
8.4
38
9.1
8.9
900
300
110
–––
–––
8.7
12.9
2.35
–––
1.0
150
100
-100
–––
10
–––
–––
–––
–––
–––
–––
3.6
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
nC
Ω
nC
V
DS
= 13V
V
GS
= 4.5V
I
D
= 17A
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 21A
V
GS
= 4.5V, I
D
mV/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
µA
nA
S
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 17A
V
DS
= V
GS
, I
D
= 25µA
e
= 17A
e
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
ns
I
D
= 17A
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
67
17
4.8
Units
mJ
A
mJ
e
Avalanche Characteristics
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
17
15
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
56
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A, V
DD
= 13V
di/dt = 200A/µs
f
A
Ã
230
1.0
26
23
V
ns
nC
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRLR/U8259PbF
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 21A
VGS = 10V
100
T J = 175°C
10
1.5
1.0
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
7
8
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLR/U8259PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
5.0
ID= 17A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
3.0
1000
Ciss
Coss
2.0
1.0
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
100
10
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
T J = 25°C
VGS = 0V
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
10msec
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLR/U8259PbF
60
Limited By Package
50
ID, Drain Current (A)
2.5
VGS(th) , Gate threshold Voltage (V)
2.0
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 25µA
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
Ri (°C/W)
τ
C
τ
0.08148
0.88089
1.48814
0.69949
0.000017
0.000107
0.001018
0.006290
τi
(sec)
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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