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SGA5263ZSQ

Description
Wide Band Low Power Amplifier, 0MHz Min, 4500MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size325KB,6 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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SGA5263ZSQ Overview

Wide Band Low Power Amplifier, 0MHz Min, 4500MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN

SGA5263ZSQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instructionTSSOP6,.08
Reach Compliance Codecompliant
ECCN code5A991.G
Characteristic impedance50 Ω
structureCOMPONENT
Gain12.3 dB
Maximum input power (CW)16 dBm
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals6
Maximum operating frequency4500 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP6,.08
power supply3.4 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum slew rate66 mA
surface mountYES
technologyBIPOLAR
Maximum voltage standing wave ratio1.4
Base Number Matches1
SGA5263ZDC
to 4500MHz,
Silicon Germa-
nium Cascad-
able Gain
Block
SGA5263Z
DC to 4500MHz, Silicon Germanium
Cascadable Gain Block
Package: SOT-363
Product Description
The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Si BiCMOS
Features
DC to 4500MHz Operation
Single Voltage Supply
Low Current Draw: 60mA at
3.4V Typ.
High Output Intercept:
29dBm Typ. at 1950MHz
Oscillator Amplifiers
Broadband Gain Block
IF/RF Buffer Amplifiers
Applications
Small Signal Gain vs. Frequency
15
10
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
dB
5
SiGe BiCMOS
25C
-40C
85C
0
0.1
1
1.9
2.8
3.7
4.6
5.5
Frequency GHz
Parameter
Small Signal Gain
Min.
12.0
Specification
Typ.
13.3
12.6
12.3
16.3
15.0
14.0
32.5
29.3
27.3
4500
1.2:1
1.4:1
18.3
19.2
19.5
4.0
3.4
60
255
Max.
14.6
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
MHz
Condition
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz, P
OUT
per tone = -10dBm
1950MHz, P
OUT
per tone = -10dBm
2400MHz, P
OUT
per tone = -10dBm
Minimum 10dB Return Loss (typ.)
1950MHz
1950MHz
850MHz
1950MHz
2400MHz
1950MHz
Output Power at 1dB Compression
Third Order Intercept Point
S
11
, S
22
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
54
Thermal Resistance
(Junction - Lead)
Test Conditions: Z
0
= 50, I
D
= 60mA, T = 25°C
66
dB
dB
dB
dB
V
mA
°C/W
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS121011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SGA5263ZSQ Related Products

SGA5263ZSQ SGA5263ZSR
Description Wide Band Low Power Amplifier, 0MHz Min, 4500MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN Wide Band Low Power Amplifier, 0MHz Min, 4500MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN
Is it Rohs certified? conform to conform to
Maker Qorvo Qorvo
package instruction TSSOP6,.08 TSSOP6,.08
Reach Compliance Code compliant compliant
ECCN code 5A991.G 5A991.G
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 12.3 dB 12.3 dB
Maximum input power (CW) 16 dBm 16 dBm
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1
Number of terminals 6 6
Maximum operating frequency 4500 MHz 4500 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code TSSOP6,.08 TSSOP6,.08
power supply 3.4 V 3.4 V
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Maximum slew rate 66 mA 66 mA
surface mount YES YES
technology BIPOLAR BIPOLAR
Maximum voltage standing wave ratio 1.4 1.4

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