BTA312X-800C
3Q Hi-Com Triac
30 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series C" triac will commutate the full rated RMS current
at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Isolated mounting base package
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
2
-
35
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
100
12
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20F
NXP Semiconductors
BTA312X-800C
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
Typ
-
-
Max
35
35
Unit
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
20
-
-
A/ms
500
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA312X-800C
BTA312X-800C/L01
BTA312X-800C/L02
TO-220F
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
SOT186A
Type number
BTA312X-800C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
2 / 13
NXP Semiconductors
BTA312X-800C
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
12
100
110
50
100
2
5
0.5
150
125
003a a b681
Unit
V
A
A
A
2
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003a a b679
100
I
T(RMS )
(A)
80
I
T(RMS )
(A)
10
60
40
5
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 59 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BTA312X-800C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
3 / 13
NXP Semiconductors
BTA312X-800C
3Q Hi-Com Triac
16
P
tot
(W)
12
003aab690
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312X-800C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
4 / 13
NXP Semiconductors
BTA312X-800C
3Q Hi-Com Triac
I
TSM
(A)
100
80
60
40
20
0
120
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312X-800C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
5 / 13
京公网安备 11010802033920号
EEWORLD
