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BF720E6327

Description
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BF720E6327 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

BF720E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.6 V
Base Number Matches1

BF720E6327 Related Products

BF720E6327 BF720E6433 BF722E6327 BF722E6433
Description Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon
Maker SIEMENS SIEMENS SIEMENS SIEMENS
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V
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