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BC848AWT3

Description
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-02, SC-70, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size169KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC848AWT3 Overview

TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-02, SC-70, 3 PIN, BIP General Purpose Small Signal

BC848AWT3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeCASE 419-02
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
ON Semiconductort
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
BC846AWT1
Series,
BC847AWT1
Series,
BC848AWT1
Series
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P
D
R
qJA
P
D
T
J
, T
stg
Max
150
833
2.4
–55 to +150
Unit
mW
°C/W
mW/°C
°C
CASE 419–02, STYLE 3
SOT–323/SC–70
COLLECTOR
3
1
BASE
2
EMITTER
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
mA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
V
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
µA
©
Semiconductor Components Industries, LLC, 2001
279
September, 2001 – Rev. 2
Publication Order Number:
BC846AWT1/D

BC848AWT3 Related Products

BC848AWT3 BC848CWT3 BC848BWT3
Description TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-02, SC-70, 3 PIN, BIP General Purpose Small Signal 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-02, SC-70, 3 PIN 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-02, SC-70, 3 PIN
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code SC-70 SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CASE 419-02, SC-70, 3 PIN
Contacts 3 3 3
Manufacturer packaging code CASE 419-02 CASE 419-02 CASE 419-02
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 420 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
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