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BCY58-IXLEADFREE

Description
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size609KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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BCY58-IXLEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

BCY58-IXLEADFREE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionTO-18, 3 PIN
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
Base Number Matches1
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY58 and BCY59
series types are silicon NPN epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY58
32
32
BCY59
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
7.0
100
200
200
340
1.0
-65 to +200
450
150
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TA=150°C
VEB=5.0V
IC=10μA (BCY58)
32
IC=10μA (BCY59)
45
IC=2.0mA (BCY58)
32
IC=2.0mA (BCY59)
45
IE=1.0μA
7.0
IC=10mA, IB=250μA
IC=100mA, IB=2.5mA
IC=10mA, IB=250μA
0.60
IC=100mA, IB=2.5mA
0.75
BCY58-VII
BCY59-VII
MIN TYP MAX
-
20
-
120 -
220
80
-
-
40
-
-
MAX
10
10
10
0.35
0.70
0.85
1.20
BCY58-IX
BCY59-IX
MIN MAX
40
-
250 460
160 630
60
-
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
BCY58-X
BCY59-X
MIN MAX
100
-
380 630
240 1000
60
-
hFE
hFE
hFE
hFE
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=10mA
IC=100mA
BCY58-VIII
BCY59-VIII
MIN MAX
20
-
180 310
120 400
45
-
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