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SY101474-3FCF

Description
Standard SRAM, 1KX4, 3ns, ECL, CQFP24, CERPACK-24
Categorystorage    storage   
File Size232KB,10 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

SY101474-3FCF Overview

Standard SRAM, 1KX4, 3ns, ECL, CQFP24, CERPACK-24

SY101474-3FCF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionQFF, QFL24,.4SQ
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time3 ns
Other featuresVCC=VCCA=0
I/O typeSEPARATE
JESD-30 codeS-GQFP-F24
JESD-609 codee0
length9.78 mm
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width4
Negative supply voltage rating-5.2 V
Number of functions1
Number of terminals24
word count1024 words
character code1000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize1KX4
Output characteristicsOPEN-EMITTER
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeQFF
Encapsulate equivalent codeQFL24,.4SQ
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply-5.2 V
Certification statusNot Qualified
Maximum seat height2.29 mm
Maximum slew rate0.3 mA
surface mountYES
technologyECL
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width9.78 mm
Base Number Matches1
SEMICONDUCTOR
SYNERGY
1K x 4 ECL RAM
SY100474-3/4/5/7
SY101474-3/4/5/7
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10474-3/4/5/7
SY10/100/101474-7
FEATURES
s
Address access time, t
AA
: 3/4/5/7ns max.
s
Chip select access time, t
AC
: 2ns max.
s
Write pulse width, t
WW
: 3ns min.
s
Edge rate, tr/tf: 500ps typ.
s
Power supply current, I
EE
: –300mA, –220mA
for –5/7ns
s
Superior immunity against alpha particles provides
virtually no soft error sensitivity
s
Built with advanced ASSET™ technology
s
Fully compatible with industry standard 10K/100K
ECL I/O levels
s
Noise margins improved with on-chip voltage and
temperature compensation
s
Open emitter output for easy memory expansion
s
ESD protection of 2000V
s
Available in 24-pin Flatpack and 28-pin PLCC and
MLCC packages
DESCRIPTION
The Synergy SY10/100/101474 are 4096-bit Random
Access Memories (RAMs), designed with advanced Emitter
Coupled Logic (ECL) circuitry. The devices are organized
as 1024-words-by-4-bits and meet the standard 10K/100K
family signal levels. The SY100474 is also supply voltage-
compatible with 100K ECL, while the SY101474 operates
from 10K ECL supply voltage (–5.2V). All feature on-chip
voltage and temperature compensation for improved noise
margin.
The SY10/100/101474 employ proprietary circuit design
techniques and Synergy’s proprietary ASSET advanced
bipolar technology to achieve extremely fast access, write
pulse width and write recovery times. ASSET uses
proprietary technology concepts to achieve significant
reduction in parasitic capacitance while improving device
packing density. Synergy’s circuit design techniques, coupled
with ASSET, result not only in ultra-fast performance, but
also allow device operation with virtually no soft error
sensitivity and with outstanding device reliability in volume
production.
BLOCK DIAGRAM
A
0
A
1
A
2
A
3
Y-Decoder/Driver
A
4
A
5
A
6
A
7
A
8
A
9
X-Decoder/
Driver
Memory Cell Array
CS
WE
SA/WA*
SA/WA
SA/WA
SA/WA
DI
0
DO
0
DI
1
DO
1
DI
2
DO
2
DI
3
DO
3
*
SA = Sense Amplifier
WA = Write Amplifier
© 1999 Micrel-Synergy
Rev.: D
Amendment: /1
1
Issue Date: December 1999
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