TPC6102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6102
Notebook PC Applications
Portable Equipment Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 48 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 6 S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−30
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t
=
5 s)
(Note 2a)
Drain power dissipation
(t
=
5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 4)
Symbol
V
DSS
V
DGR
V
GSS
I
D
Rating
−30
−30
±20
−4.5
A
I
DP
−18
Unit
V
V
V
JEDEC
W
―
―
2-3T1A
P
D
2.2
JEITA
TOSHIBA
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
0.7
3.3
−2.25
0.22
150
−55
to 150
W
mJ
A
mJ
°C
°C
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2a)
Symbol
R
th (ch-a)
Max
56.8
Unit
°C/W
1
2
3
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic- ensitive device. Please handle with caution.
1
2004-07-06
TPC6102
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
GS
0 V
−10
V
4.7
Ω
I
D
= −2.2
A
V
OUT
R
L
=
6.8
Ω
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −30
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
20 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −4.5
V, I
D
= −2.2
A
V
GS
= −10
V, I
D
= −2.2
A
V
DS
= −10
V, I
D
= −2.2
A
Min
⎯
⎯
−30
−15
−0.8
⎯
⎯
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DD
∼
−24
V, V
GS
= −10
V,
−
I
D
= −4.5
A
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
78
48
6.0
500
110
150
3
7
31
79
11
8.5
2.5
Max
±10
−10
⎯
⎯
−2.0
100
60
⎯
⎯
⎯
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
⎯
nC
pF
Unit
µA
µA
V
V
mΩ
S
V
DD
∼
−15
V
−
Duty
<
1%, t
w
=
10
µs
=
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Pulse drain reverse current
Forward voltage (diode)
(Note 1)
Symbol
I
DRP
V
DSF
Test Condition
⎯
I
DR
= −4.5
A, V
GS
=
0 V
Min
⎯
⎯
Typ.
⎯
⎯
Max
−18
1.2
Unit
A
V
2
2004-07-06
TPC6102
Marking
(Note 5)
Lot code (month)
Lot No.
Part No.
(or abbreviation code)
S3B
Product-specific code
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Pin #1
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
=
5 s)
(b) Device mounted on a glass-epoxy board (b) (t
=
5 s)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
FR-4
25.4
×
25.4
×
0.8
Unit: (mm)
(a)
(b)
Note 3: V
DD
= −24
V, T
ch
=
25°C (initial), L
=
0.5 mH, R
G
=
25
Ω,
I
AR
= −2.25
A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
•
on lower left of the marking indicates Pin 1.
3
2004-07-06
TPC6102
I
D
– V
DS
−5
−10
−4
−4.5
−4
−3.5
−3
−3
−10
−10
−6
−8
−4
−3.5
I
D
– V
DS
−3
(A)
(A)
−2.8
−6
−2.6
−4
−2.4
VGS
= −2.2
V
Common source
Ta
=
25°C
Pulse test
−1
−2
−3
−4
−5
I
D
Drain current
−2.6
−2
−2.4
VGS
= −2.2
V
Common source
Ta
=
25°C
Pulse test
−0.1
−0.2
−0.3
−0.4
−0.5
Drain current
−2.8
I
D
Drain-source voltage
V
DS
(V)
−1
−2
0
0
0
0
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−12
Common source
VDS
= −10
V
Pulse test
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
0
V
DS
– V
GS
Common source
Ta
=
25°C Pulse test
(A)
−8
Ta
= −55°C
100°C
I
D
Drain current
−6
25°C
Drain-source voltage
V
DS
(V)
−10
ID
= −4.5
A
−4
−2
−2.2
A
−1.1
A
−2
−4
−6
−8
−10
0
0
−0.5
−1
−1.5
−2
−2.5
−3
−3.5
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
100
Common source
VDS
= −10
V
Pulse test
1000
Common source
Ta
=
25°C
Pulse test
R
DS (ON)
– I
D
Forward transfer admittance
⎪Y
fs
⎪
(S)
30
Drain-source on resistance
R
DS (ON)
(mΩ)
300
10
Ta
= −55°C
25°C
100°C
100
−4.5
V
VGS
= −10
V
30
3
1
−1
−3
−5
−10
−30
−50
−100
10
−0.1
−0.3
−1
−3
−10
−30
−100
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2004-07-06
TPC6102
R
DS (ON)
– Ta
140
120
Common source
Pulse test
−2.2
A
−4.5
A
ID
= −1.1
A
80
60
40
VGS
= −10
V
20
0
−80
ID
= −1.1
A
−2.2
A
VGS
= −4.5
V
−4.5
A
−100
I
DR
– V
DS
Common source
Ta
=
25°C
Pulse test
−5
V
−10
−10
V
Drain-source on resistance
R
DS (ON)
(mΩ)
100
Drain reverse current
I
DR
(A)
−30
−3
−3
V
−1
−1
V
−0.3
VGS
= −0
V
−40
0
40
80
120
160
−0.1
0
0.2
0.4
0.6
0.8
1
1.2
Ambient temperature
Ta
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
1000
−2
V
th
– Ta
Common source
VGS
= −10
V
ID
= −1
mA
Pulse test
Ciss
V
th
(V)
Gate threshold voltage
−1.6
(pF)
300
C
−1.2
Capacitance
100
Coss
Crss
−0.8
30 Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
10
−0.1
−0.3
−1
−3
−10
−30
−0.4
−100
0
−80
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Ambient temperature
Ta
(°C)
P
D
– Ta
2.5
(1) t
=
5 s
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) DC
1
(2) t
=
5 s
0.5
(2) DC
0
0
−40
Dynamic input/output characteristics
Common source
ID
= −4.5
A
Ta
=
25°C
Pulse test
VDD
= −24
V
VDS
−16
−12
V
−6
V
−12
VDD
= −24
V
(W)
(V)
2
P
D
Drain power dissipation
Drain-source voltage
−20
−12
V
−10
−8
VGS
−4
−6
V
40
80
120
160
0
0
4
8
12
16
0
20
Ambient temperature
Ta
(°C)
Total gate charge Q
g
(nC)
5
2004-07-06
Gate-source voltage
1.5
V
DS
−30
V
GS
(V)
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