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SFA808COG

Description
Rectifier Diode, 1 Element, 8A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size414KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFA808COG Overview

Rectifier Diode, 1 Element, 8A, 600V V(RRM),

SFA808COG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current125 A
Number of components1
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Base Number Matches1
CREAT BY ART
SFA801G - SFA808G
8.0AMPS Glass Passivated Super Fast Rectifier
TO-220AC
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss
For use in low voltage, high frequency inverter,
Free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering:
260℃/10 seconds/.16",(4.06mm) from case
Weight: 1.9 grams
Ordering Information(example)
Part No.
Package
Packing
50 / TUBE
Packing code
C0
Packing code
(Green)
C0G
SFA801G TO-220AC
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=100
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjC
T
J
T
STG
SFA
801G
50
35
50
SFA
802G
100
70
100
SFA
803G
150
105
150
SFA
804G
200
140
200
8
SFA
805G
300
210
300
SFA
806G
400
280
400
SFA
807G
500
350
500
SFA
808G
600
420
600
Unit
V
V
V
A
A
125
0.975
10
400
35
100
4
- 55 to + 150
- 55 to + 150
60
O
1.3
1.7
V
uA
nS
pF
C/W
O
O
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:I13
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