BC640, BC640−16
High Current Transistors
PNP Silicon
Features
•
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−80
−80
−5.0
−0.5
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 14
12
1
3
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
BC
640
AYWW
G
G
BC64
0−16
AYWW
G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
March, 2007 − Rev. 0
Publication Order Number:
BC640/D
BC640, BC640−16
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector − Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter − Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
(V
CB
= −30 Vdc, I
E
= 0, T
A
= 125°C)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= −5.0 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −150 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −500 mA, V
CE
= −2.0 V)
Collector − Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
Base − Emitter On Voltage
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= −50 mAdc, V
CE
= −2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2.0%.
f
T
−
C
ob
−
C
ib
−
110
−
9.0
−
pF
150
−
pF
MHz
V
CE(sat)
V
BE(on)
−
−
−1.0
h
FE
BC640
BC640−16
25
40
100
25
−
−
−
−
−
−
−0.25
−0.5
−
160
250
−
−0.5
−
Vdc
Vdc
−
V
(BR)CEO
−80
V
(BR)CBO
−80
V
(BR)EBO
I
CBO
−
−
−
−
−100
−10
nAdc
mAdc
−5.0
−
−
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
BC640G
BC640ZL1G
BC640−16
BC640−16G
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
2000 Units / Ammo Box
5000 Units / Bulk
5000 Units / Bulk
http://onsemi.com
2
BC640, BC640−16
−1000
−500
IC, COLLECTOR CURRENT (mA)
−200
−100
−50
−20
−10
−5
−2
−1
−1
P
D
T
A
25°C
P
D
T
C
25°C
BC636
BC638
BC640
P
D
T
A
25°C
P
D
T
C
25°C
SOA = 1S
hFE, DC CURRENT GAIN
200
−A
100
−L
500
V
CE
= −2 V
−B
50
−2 −3 −4 −5 −7 −10
−20 −30−40 −50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
−1
−3
−5
−10
−30 −50 −100
I
C
, COLLECTOR CURRENT (mA)
−300 −500 −1000
Figure 1. Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)
Figure 2. DC Current Gain
500
300
V, VOLTAGE (VOLTS)
−1
−0.8
−0.6
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −2 V
100
V
CE
= −2 V
f T, CURRENT−GAIN
50
20
−1
−10
−100
I
C
, COLLECTOR CURRENT (mA)
−1000
0
−1
−10
−100
I
C
, COLLECTOR CURRENT (mA)
−1000
Figure 3. Current Gain Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
−0.2
−1.0
V
CE
= −2 VOLTS
DT
= 0°C to +100°C
q
V
for V
BE
−1.6
−2.2
−1
−3
−5
−10
−30 −50 −100
I
C
, COLLECTOR CURRENT (mA)
−300 −500 −1000
Figure 5. Temperature Coefficients
http://onsemi.com
3
BC640, BC640−16
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
BC640/D
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