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BD680

Description
4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size75KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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BD680 Overview

4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126

BD680 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)5000 ns
Maximum opening time (tons)1500 ns
VCEsat-Max2.5 V
PNP BD676-BD678-BD680-BD682
NPN BD675-BD677-BD679-BD681
SILICON DARLINGTON POWER
TRANSISTORS
The BD676-BD678-BD680-BD682 are PNP eptaxial-base transistors in monolithic
Darlington circuit for audio and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD675-BD677-BD679-BD681 .
ABSOLUTE MAXIMUM RATINGS
Symbol
-V
CEO
Collector-Emitter Voltage
Ratings
BD676
BD678
BD680
BD682
BD676
BD678
BD680
BD682
-I
C
-I
CM
-I
BM
@ T
mb
= 25°C
Value
45
60
80
100
45
60
80
100
5
4
6
0.1
40
150
-65 to +150
Unit
V
-V
CBO
-V
EBO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
Watts
°C
°C
-I
C
-I
B
P
T
T
J
T
Stg
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
R
thJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1

BD680 Related Products

BD680 BD676 BD678 BD682
Description 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Is it Rohs certified? conform to conform to conform to conform to
Maker COMSET COMSET COMSET COMSET
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 45 V 60 V 100 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750 750
JEDEC-95 code TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum off time (toff) 5000 ns 5000 ns 5000 ns 5000 ns
Maximum opening time (tons) 1500 ns 1500 ns 1500 ns 1500 ns
VCEsat-Max 2.5 V 2.5 V 2.5 V 2.5 V
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