PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
SILICON POWER TRANSISTOR
The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.
They are intended for use in audio output stages and general amplifier and switching appications.
NPN complements are BDT81 – BDT83 – BDT85 – BDT87.
ABSOLUTE MAXIMUM RATINGS
Symbol
-V
CEO
Collector-Emitter Voltage
Ratings
-I
B
= 0
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
60
80
100
120
60
80
100
120
7
Unit
V
-V
CBO
Collector-Base Voltage
-I
E
= 0
V
-V
EBO
Emitter-Base Voltage
-I
C
= 0
V
-I
C
Collector Current
15
A
-I
CM
Collector Peak Current
20
A
-I
B
Base Current
4
A
P
t
Total Power Dissipation
@ T
C
= 25°
125
Watts
COMSET SEMICONDUCTORS
1/3
PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
Symbol
T
J
Junction Temperature
Ratings
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
150
Unit
°C
T
Stg
Storage Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
R
thJa
R
thJmb
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
Value
70
1
Unit
K/W
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-I
CB0
Ratings
Collector Cutoff Current
Test Condition(s)
-I
E
=0A , -
V
CB
=60 V
-I
E
=0A , -
V
CB
=80 V
-I
E
=0A , -
V
CB
=100 V
-I
E
=0A , -
V
CB
=120 V
-V
BE
=0 , -V
CE
= 60V
-V
BE
=0 , -V
CE
= 80V
-V
BE
=0 , -V
CE
= 100V
-V
BE
=0 , -V
CE
= 120V
-V
EB
=7.0 V, -I
C
=0
Min Typ Mx Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
1
1
1
1
0.1
mA
-I
CES
Collector Cutoff Current
-I
EBO
Emitter Cutoff Current
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
mA
mA
-I
C
=50 m A , -V
CE
=10 V
40
-
-
-
H
FE
DC Current Gain (1)
-I
C
=5 A , -V
CE
=4.0 V
40
-
-
-I
C
=5 A , -I
B
=0.5 A
-
-
1
V
-V
CE(SAT)
Collector-Emitter
saturation Voltage (1)
-I
C
=7 A , -I
B
=0.7 A
-
-
1.6
COMSET SEMICONDUCTORS
2/3
PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
-V
BE
Base-Emitter voltage (1)
-I
C
=5 A , -V
CE
=4 V
BDT82
BDT84
BDT86
BDT88
-
-
1.5
V
Symbol
-I
S/B
f
T
t
on
T
off
Ratings
Second breakdown collector
current
Transition frequency
Turn-on time
Turn-off time
Test Condition(s)Sec
-V
CE
=50 V , t
P
= 100 ms
-V
CE
=10 V , -I
C
=0.5 A , f=1 MHz
-I
C
=7 A , -I
B1
= I
B2
=0.7 A
-I
C
=7 A , -I
B1
= I
B2
=0.7 A
Min Typ Mx Unit
2.5
-
-
-
-
20
-
-
-
-
1
2
A
MHz
µs
(1) Pulse Duration = 300
µs, δ
<= 2%
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,52
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
Base
Collector
Emitter
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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