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BDY24

Description
NPN SILICON TRANSISTORS, DIFFUSED MESA
CategoryDiscrete semiconductor    The transistor   
File Size236KB,4 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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BDY24 Overview

NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY24 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage90 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)87.5 W
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Maximum off time (toff)500 ns
Maximum opening time (tons)500 ns
VCEsat-Max0.6 V
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
Stg
Collector-Emitter Voltage
Ratings
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Value
60
90
140
60
100
200
10
6
3
Unit
V
V
V
A
A
Watts
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
87.5
200
-65 to +200
°C
COMSET SEMICONDUCTORS
1/4

BDY24 Related Products

BDY24 182T2 180T2 BDY23 BDY25
Description NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker COMSET COMSET COMSET COMSET COMSET
Reach Compliance Code unknow unknow unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 90 V 140 V 60 V 60 V 140 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JEDEC-95 code TO-3 TO-3 TO-3 TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 87.5 W 87.5 W 87.5 W 87.5 W 87.5 W
surface mount NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz
Maximum off time (toff) 500 ns 500 ns 500 ns 500 ns 500 ns
Maximum opening time (tons) 500 ns 500 ns 500 ns 500 ns 500 ns
VCEsat-Max 0.6 V 0.6 V 1 V 1 V 0.6 V
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