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BDY56

Description
NPN SILICON TRANSISTORS, DIFFUSED MESA
CategoryDiscrete semiconductor    The transistor   
File Size128KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
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BDY56 Overview

NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY56 Parametric

Parameter NameAttribute value
MakerCOMSET
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)117 W
surface mountNO
Nominal transition frequency (fT)10 MHz
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J
T
S
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
Ratings
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
Value
60
120
100
150
7
15
7
Unit
V
V
V
A
A
Watts
117
200
°C
-65 to +200
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDY55
BDY56
Value
1.5
Unit
°C/W
Page 1 of 3

BDY56 Related Products

BDY56 BDY55
Description NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA
Maker COMSET COMSET
Reach Compliance Code unknow unknow
Maximum collector current (IC) 15 A 15 A
Configuration Single Single
Minimum DC current gain (hFE) 10 10
Maximum operating temperature 200 °C 200 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 117 W 117 W
surface mount NO NO
Nominal transition frequency (fT) 10 MHz 10 MHz
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