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BUX80

Description
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size113KB,2 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Download Datasheet Parametric View All

BUX80 Overview

10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3

BUX80 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CER
V
EBO
V
CES
I
C
I
CM
I
B
P
t
T
J
T
Stg
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Ratings
I
B
= 0
R
BE
= 50Ω
I
C
= 0
V
BE
= 0
t
p
= 10ms
@ T
C
= 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
Ratings
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
CER
I
EBO
I
CES
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Emitter Cutoff Current
Collector Cutoff Current
I
C
=100 mA
Test Condition(s)
Min Typ Mx Unit
400
500
-
-
-
-
-
-
-
-
-
-
10
1
3
V
V
mA
mA
I
C
=100 mA ,
R
BE
= 50Ω
V
CE
=10 V , I
C
=0
V
CE
= V
CES
, V
BE
= 0
V
CE
= V
CES
, V
BE
= 0, T
case
= 125°C
COMSET SEMICONDUCTORS
1/2

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