APT30DS20HJ
ISOTOP
®
Schottky Diode
Full Bridge Power Module
Application
Switch mode power supplies rectifier
Induction heating
Welding equipment
V
RRM
= 200V
I
F
= 30A @ Tc = 80°C
Features
Ultra fast recovery times
Soft recovery characteristics
High current
Very low stray inductance
High level of integration
ISOTOP
®
Package (SOT-227)
+
~
-
Benefits
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
~
Absolute maximum ratings
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward
Current
Duty cycle = 50%
8.3ms
T
C
= 25°C
T
C
= 80°C
T
J
= 45°C
Max ratings
200
45
30
320
A
APT30DS20HJ – Rev 1 October, 2012
Unit
V
Non-Repetitive Forward Surge Current
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APT30DS20HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
Thermal Impedance (°C/W)
1.2
1
0.8
0.6
0.4
0.2
0
0.00001
0.5
0.3
0.1
0.05
0.0001
0.001
Single Pulse
0.9
0.7
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
60
I
F
, Forward Current (A)
50
40
30
T
J
=125°C
120
t
rr
, Reverse Recovery Time (ns)
Trr vs. Current Rate of Charge
T
J
=125°C
V
R
=133V
60 A
100
80
30 A
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V
F
, Anode to Cathode Voltage (V)
Q
RR
vs. Current Rate Charge
T
J
=125°C
V
R
=133V
T
J
=25°C
60
40
20
0
200
400
-di
F
/dt (A/µs)
600
800
15 A
Q
RR
, Reverse Recovery Charge (nC)
I
RRM
, Reverse Recovery Current (A)
1800
1500
1200
900
600
35
30
25
20
15
10
5
0
I
RRM
vs. Current Rate of Charge
T
J
=125°C
V
R
=133V
60 A
30 A
60 A
30 A
15 A
15 A
300
0
0
200
400
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
1250
600
800
200
400
-diF/dt (A/µs)
600
800
C, Capacitance (pF)
1000
750
500
250
0
1
10
100
1000
V
R
, Reverse Voltage (V)
www.microsemi.com
3-5
APT30DS20HJ – Rev 1 October, 2012
APT30DS20HJ
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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5-5
APT30DS20HJ – Rev 1 October, 2012
Embedded System
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