BAR90...
Silicon Deep Trench PIN Diodes
•
Optimized for low bias current antenna switches
in hand held applications
•
Very low capacitance at zero volt reverse bias
at frequencies above 1GHz (typ. 0.19pF)
•
Low forward resistance (typ. 1.3Ω @
I
F
= 3mA)
•
Improved ON / OFF mode harmonic
distortion balance
BAR90-02L
BAR90-02LRH
BAR90-07L4
BAR90-07LRH
"
!
BAR90-098L4
BAR90-098LRH
"
,
BAR90-099L4
BAR90-099LRH
"
!
!
,
,
,
,
,
Type
BAR90-02L*
BAR90-02LRH*
BAR90-07L4*
BAR90-07LRH*
BAR90-098L4*
BAR90-098LRH*
BAR90-099L4*
BAR90-099LRH*
Package
TSLP-2-1
TSLP-2-7
TSLP-4-4
TSLP-4-7
TSLP-4-4
TSLP-4-7
TSLP-4-4
TSLP-4-7
Configuration
single, leadless
single, leadless
parallel pair, leadless
parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair, leadless
L
S
(nH)
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
Marking
RT
R9
RT
T
TT
T9
TR
99
* Preliminary data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
≤
133°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
Symbol
V
R
I
F
P
tot
Value
80
100
250
Unit
V
mA
mW
1
Nov-02-2004
BAR90...
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
65
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 60 V
Forward voltage
I
F
= 3 mA
I
F
= 100 mA
1
For
Unit
max.
-
50
V
nA
V
typ.
-
-
V
(BR)
I
R
V
F
80
-
0.75
-
0.81
0.9
0.87
1
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Nov-02-2004
BAR90...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 3 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 3 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR90-02L
Unit
max.
pF
typ.
C
T
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
0.25
0.3
0.19
0.18
0.35
-
-
-
kΩ
35
5
4
-
-
-
Ω
2
1.3
0.8
750
-
2.3
-
-
ns
-
W
I
|S
21
|
2
-
-
-
-
20
-0.16
-0.11
-0.08
-
-
-
-
µm
dB
|S
21
|
2
-
-
-
-18.5
-13.5
-11.5
-
-
-
in series configuration,
Z
= 50
Ω
3
Nov-02-2004
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