TC74VHC573F/FT/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC573F,TC74VHC573FT,TC74VHC573FK
Octal D-Type Latch with 3-State Output
The TC74VHC573 is an advanced high speed CMOS OCTAL
LATCH with 3-STATE OUTPUT fabricated with silicon gate
C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This 8-bit D-type latch is controlled by a latch enable input
(LE) and an output enable input (
OE
).
When the
OE
input is high, the eight outputs are in a high
impedance state.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
TC74VHC573F
TC74VHC573FT
Features
•
•
•
•
•
•
•
•
High speed: t
pd
= 4.5 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
4
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
pLH
∼
t
pHL
−
Wide operating voltage range: V
CC (opr)
=
2 to 5.5 V
Low noise: V
OLP
=
1.2 V (max)
Pin and function compatible with 74ALS573
TC74VHC573FK
Weight
SOP20-P-300-1.27A
TSSOP20-P-0044-0.65A
VSSOP20-P-0030-0.50
: 0.22 g (typ.)
: 0.08 g (typ.)
: 0.03 g (typ.)
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2007-10-01
TC74VHC573F/FT/FK
Pin Assignment
IEC Logic Symbol
(1)
(11)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
OE
D0
D1
D2
D3
D4
D5
D6
D7
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
(top view)
V
CC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
LE
OE
LE
D0
D1
D2
D3
D4
D5
D6
D7
EN
C1
1D
(19)
(18)
(17)
(16)
(15)
(14)
(13)
(12)
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
GND 10
Truth Table
Inputs
OE
LE
X
L
H
H
D
X
X
L
H
Output
Z
Q
n
L
H
H
L
L
L
X: Don’t care
Z: High impedance
Q
n
: Q outputs are latched at the time when the LE input is taken to a low logic level.
System Diagram
D0
2
D
3
D
D1
4
D
D2
5
D
D3
6
D
D4
7
D
D5
8
D
D6
9
D
D7
LE
11
L Q
L Q
L Q
L Q
L Q
L Q
L Q
L Q
OE
1
19
Q0
18
Q1
17
Q2
16
Q3
15
Q4
14
Q5
13
Q6
12
Q7
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2007-10-01
TC74VHC573F/FT/FK
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+ 0.5
−20
±20
±25
±75
180
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 100 (V
CC
= 3.3 ± 0.3 V)
0 to 20 (V
CC
= 5 ± 0.5 V)
Unit
V
V
V
°C
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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2007-10-01
TC74VHC573F/FT/FK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
V
CC
(V)
High-level input
voltage
2.0
V
IH
―
3.0 to
5.5
2.0
V
IL
―
3.0 to
5.5
2.0
High-level output
voltage
V
IN
= V
IH
or
V
IL
I
OH
=
−50 μA
3.0
4.5
I
OH
=
−4
mA
I
OH
=
−8
mA
3.0
4.5
2.0
Low-level output
voltage
V
IN
= V
IH
or
V
IL
I
OL
= 50
μA
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output
off-state current
Input leakage
current
Quiescent supply
current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
Min
1.50
V
CC
×
0.7
―
―
1.9
2.9
4.4
2.58
3.94
―
―
―
―
―
―
Ta = 25°C
Typ.
―
―
―
―
2.0
3.0
4.5
―
―
0.0
0.0
0.0
―
―
―
Max
―
―
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.36
0.36
±0.25
Ta =
−40
to 85°C
Min
1.50
V
CC
×
0.7
―
―
1.9
2.9
4.4
2.48
3.80
―
―
―
―
―
―
Max
―
―
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.44
0.44
±2.50
μA
V
V
V
V
Unit
Low-level input
voltage
V
OH
V
OL
0 to 5.5
5.5
―
―
―
―
±0.1
4.0
―
―
±1.0
40.0
μA
μA
Timing Requirements
(input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
Minimum pulse width
(LE)
Minimum set-up time
t
w (H)
―
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
Ta = 25°C
Typ.
―
―
―
―
―
―
Limit
5.0
5.0
3.5
3.5
1.5
1.5
Ta =
−40
to
85°C
Limit
5.0
5.0
3.5
3.5
1.5
1.5
ns
Unit
t
s
t
h
―
ns
Minimum hold time
―
ns
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2007-10-01
TC74VHC573F/FT/FK
AC Characteristics
(input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
Propagation delay
time
(LE-Q)
3.3 ± 0.3
―
5.0 ± 0.5
C
L
(pF)
15
50
15
50
15
50
15
50
15
50
15
50
50
50
50
50
Min
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
(Note 2)
―
Ta = 25°C
Typ.
7.6
10.1
5.0
6.5
7.0
9.5
4.5
6.0
7.3
9.8
5.2
6.7
10.7
6.7
―
―
4
6
29
Max
11.9
15.4
7.7
9.7
11.0
14.5
6.8
8.8
11.5
15.0
7.7
9.7
14.5
9.7
1.5
1.0
10
―
―
Ta =
−40
to 85°C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
―
―
―
―
―
Max
14.0
17.5
9.0
11.0
13.0
16.5
8.0
10.0
13.5
17.0
9.0
11.0
16.5
11.0
1.5
1.0
10
―
―
ns
ns
ns
ns
Unit
t
pLH
t
pHL
Propagation delay
time
(D-Q)
t
pLH
t
pHL
3.3 ± 0.3
―
5.0 ± 0.5
3-state output enable
time
t
pZL
t
pZH
3.3 ± 0.3
R
L
= 1 kΩ
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
―
―
3-state output disable
time
Output to output skew
Input capacitance
Output capacitance
Power dissipation
capacitance
t
pLZ
t
pHZ
t
osLH
t
osHL
C
IN
C
OUT
C
PD
R
L
= 1 kΩ
(Note 1)
ns
pF
pF
pF
Note 1: Parameter guaranteed by design.
t
osLH
= |t
pLHm
−
t
pLHn
|, t
osHL
= |t
pHLm
−
t
pHLn
|
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/8 (per latch)
And the total C
PD
when n pcs. of latch operate can be gained by the following equation:
C
PD
(total) = 21 + 8·n
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2007-10-01