BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
410mW 2% Zener Diodes
FEATURES
●
●
●
●
●
Wide zener voltage range selection: 2.4V to 75V
V
Z
Tolerance Selection of ± 2%
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
VALUE
2.4-75
5-2
410
0.9
150
UNIT
V
mA
mW
V
°C
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
Package
Configuration
SOD-123
Single die
MECHANICAL DATA
● Case: SOD-123
● Molding compound: UL flammability classification
rating 94V-0
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 10.54mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
VALUE
0.9
410
-55 to +150
-55 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
357
UNIT
°C/W
1
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
TYPICAL
ZENER
VOLTAGE
PART
NUMBER
MARKING
CODE
V
Z
@ I
ZT
V
Min.
BZT52B2V4-G
BZT52B2V7-G
BZT52B3V0-G
BZT52B3V3-G
BZT52B3V6-G
BZT52B3V9-G
BZT52B4V3-G
BZT52B4V7-G
BZT52B5V1-G
BZT52B5V6-G
BZT52B6V2-G
BZT52B6V8-G
BZT52B7V5-G
BZT52B8V2-G
BZT52B9V1-G
BZT52B10-G
BZT52B11-G
BZT52B12-G
BZT52B13-G
BZT52B15-G
BZT52B16-G
BZT52B18-G
BZT52B20-G
BZT52B22-G
BZT52B24-G
BZT52B27-G
BZT52B30-G
BZT52B33-G
BZT52B36-G
BZT52B39-G
BZT52B43-G
BZT52B47-G
BZT52B51-G
BZT52B56-G
BZT52B62-G
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
2WF
2WG
2WH
2WI
2WJ
2WK
2WL
2WM
2WN
2WO
2WP
2WQ
2WR
2WS
2WT
2WU
2WV
X1.
X2.
X3.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
Nom.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
I
ZT
mA
Z
ZT
@ I
ZT
Ω
Max.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
130
100
100
200
215
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
350
750
750
400
423
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
0.5
0.5
I
ZK
mA
I
R
@ V
R
µA
Max.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.045
0.045
0.045
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
29.4
35.0
35.7
39.2
43.4
V
@ I
ZTC
mV/°C
Min.
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
36.4
10.0
10.0
10.0
10.0
Max.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
45.2
12.0
12.0
12.0
12.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
5
5
5
5
I
ZTC
mA
TEST
CURRENT
REGULAR
TEST
LEAKAGE TEMPERATURE
TEST
IMPEDANCE CURRENT CURRENT
COEFFICIENT CURRENT
2
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
TYPICAL
ZENER
VOLTAGE
PART
NUMBER
MARKING
CODE
V
Z
@ I
ZT
V
Min.
BZT52B68-G
BZT52B75-G
X4.
X5.
66.64
73.5
Nom.
68
75
Max.
69.36
76.5
2
2
I
ZT
mA
Z
ZT
@ I
ZT
Ω
Max.
240
255
Z
ZK
@ I
ZK
Ω
Max.
447
470
0.5
0.5
I
ZK
mA
I
R
@ V
R
µA
Max.
0.045
0.045
47.6
52.5
V
@ I
ZTC
mV/°C
Min.
10.0
10.0
Max.
12.0
12.0
5
5
I
ZTC
mA
TEST
CURRENT
REGULAR
TEST
LEAKAGE TEMPERATURE
TEST
IMPEDANCE CURRENT CURRENT
COEFFICIENT CURRENT
ORDERING INFORMATION
ORDERING CODE
(Note 1)
BZT52Bxxx-G RHG
PACKAGE
SOD-123
PACKING
3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (BZT52B2V4-G) to 75V (BZT52B75-G)
3
Version: H2002
BZT52B2V4-G - BZT52B75-G
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Power Dissipation Curve
500
450
400
Power Dissipation (mW)
350
Iz (mA)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
Vz (V)
6
7
8
9
10
10
30
3V3
40
4V7
50
2V7
3V9
5V6
6V8
Fig.2 Zener Breakdown Characteristics
8V2
20
Test current
Iz 5mA
Ambient Temperature (°C)
Fig.3 Zener Breakdown Characteristics
30
10
12
15
20
18
22
Iz (mA)
10
Test
current
Iz 5mA
27
33
0
0
10
20
Vz (V)
30
40
4
Version: H2002
ARM Technology
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